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BVDSS 25V - 30V High Current Mosfet , On State Resistance Fast Switching Transistor

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BVDSS 25V - 30V High Current Mosfet , On State Resistance Fast Switching Transistor

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Brand Name : Original brand

Model Number : DMHT3006LFJ-13

Certification : Original

Place of Origin : Original

MOQ : 3000pcs

Price : Negotiation

Payment Terms : T/T

Supply Ability : 100000pcs

Delivery Time : 2-3days

Packaging Details : 3000/Reel

Product : MOSFET MOSFET BVDSS: 25V-30V

Technology : Si

Package : V-DFN5045-12

Transistor Polarity : N-Channel

Channel Pattern : Enhancement

Pd-Power Dissipation : 2.1 W

Vds-Leakage source breakdown electric shock : 30 V

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Mosfet Power Transistor DMHT3006LFJ-13 V-DFN5045-12 Mosfet BVDSS: 25V-30V

Description

This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Feature

Low On-Resistance 

Low Input Capacitance 

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 

Halogen and Antimony Free. “Green” Device (Note 3)

Mechanical Data 

Case: V-DFN5045-12 

Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 

Moisture Sensitivity: Level 1 per J-STD-020 

Terminals: Finish – NiPdAu over Copper Leadframe.

Solderable per MIL-STD-202, Method 208 

Weight: 0.056grams (Approximate)

Categories

MOSFET MOSFET BVDSS: 25V-30V

DMHT3006LFJ-13
Transistor Polarity N-Channel
Channel No. 4 Channel
Leakage Source on-resistance 10 mOhms
Working Temperature -55C to +150C
Pd-Power Dissipation 2.1 W
Vgs th-Gate Source threshold Voltage 30 V
Configure Quad



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BVDSS 25V - 30V High Current Mosfet , On State Resistance Fast Switching Transistor




Product Tags:

n channel power mosfet

      

high power transistor

      
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